HATCN, HIL material for enhancing the performance of OLEDs
Able to prevent interfacial mixing and erosion during fabrication
| | | |
1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile, also known as HAT-CN (CAS number 105598-27-4), is one of the members of the 1,4,5,8,9,12-hexaazatriphenylene (HAT) family, which have an electron-deficient, rigid, planar, aromatic discotic system with an excellent π–π stacking ability. For this reason, HAT-CN finds applications in (OLEDs) serving either as the or charge-generation layer (CGL) material.
HATCN from Ossila was used in the high-impact paper (IF 7.059), , J. Pan et al., J. Mater. Chem. C, 8, 5572-5579 (2020); DOI: 10.1039/D0TC00661K.
It has been proven that using HAT-CN as a material can dramatically enhance the performance of solution-processed organic light-emitting diodes [2]. Lin et al further demonstrated that the external quantum efficiency, current efficiency, and power efficiency of the HAT-CN based devices were higher than or almost similar to those of optimised -based devices. Solution-processed HAT-CN is promising as a novel alternative to conventional PEDOT:PSS HILs, due to its efficient carrier-injection capability and the capacity to prevent interfacial mixing and erosion during fabrication.
General Information
| CAS Number | 105598-27-4 |
|---|---|
| Chemical Formula | C18N12 |
| Molecular Weight | 384.27 g/mol |
| Absorption | λmax 282, 321 nm (in CH2Cl2) |
| Fluorescence | λem 422 nm (in CH2Cl2) |
| HOMO/LUMO | HOMO 7.5 eV, LUMO 4.4 eV [1] |
| Synonyms | 1,4,5,8,9,11-Hexaazatriphenylenehexacarbonitrile HAT-CN6 HATCN Dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile |
| Classification / Family | Charge-generation layer (CGL) materials, Hole-injection layer materials (HIL), OLED and PLED materials, Organic electronics, Perovskite solar cells |
Product Details
| Purity | Sublimed M791 >99.0% Unsublimed M792 >98.0% |
|---|---|
| Thermal Gravimetric Analysis (TGA) | 430 °C (0.5% weight loss) |
| Appearance | Dark yellow powder/crystals |
Chemical Structure
Device Structure(s)
The following are all free devices.
| Device Structure | ITO/HAT-CN(10 nm)/HAT-CN:(2:1, 60 nm)/(20 nm)/::(1:1:8 wt% 10 nm)/: (1:10%, 35 nm)/Liq(1 nm)/Al(1 nm)/HAT-CN(20 nm)/HAT-CN:TAPC(2:1, 10 nm)/TAPC(40 nm)/ :Be(pp)2:Ir(mppy)3(1:1:8 wt% 10 nm)/Be(pp)2(15 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq(1 nm)/Al(100 nm) [1] |
|---|---|
| Colour | Green |
| Max. Current Efficiency | 241 cd/A |
| Max. Power Efficiency | 143 lm W−1 |
| Device Structure | ITO/HAT-CN (10 nm)/ (45 nm)/BCzSCN*::PO-01 (8 wt%, 0.5 wt%, 20 nm)/ (50 nm)/ (2 nm)/Al (120 nm) [3] |
|---|---|
| Colour | Blue |
| Max. EQE | 22% |
| Max. Current Efficiency | 66.0 cd/A |
| Max. Power Efficiency | 64.0 lm W−1 |
| Device Structure | ITO/HAT-CN (10 nm)/ (45 nm)/:Ir(dbi)3 10 wt% (20 nm)/ (40 nm)/ (2 nm)/Al (120 nm) [4] |
|---|---|
| Colour | Sky Blue |
| Max. EQE | 23.1% |
| Max. Current Efficiency | 61.5 cd/A |
| Max. Power Efficiency | 43.7 lm W−1 |
| Device Structure | ITO (150 nm)/HAT-CN (4 nm)/VB-FNPD* (35 nm)/: 10 wt% (20 nm)/ (60 nm)/ CsF (1 nm)/Al (120 nm) [5] |
|---|---|
| Colour | Green |
| Max. EQE | 14.7% |
| Max. Current Efficiency | 50.9 cd/A |
| Max. Power Efficiency | 55.0 lm W−1 |
| Device Structure | Graphene (2–3 nm)/(30 nm)/HAT-CN(10 nm)/TAPC(30 nm)/HAT-CN(10 nm)/TAPC(30 nm)/ : (5 nm)/: FIrpic (5 nm)/BmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) [6] |
|---|---|
| Colour | Blue |
| Max. EQE | 15.1% |
| Max. Power Efficiency | 14.5 lm W−1 |
| Device Structure | ITO/HATCN (5 nm)/ (40 nm)/ (10 nm)/:6 wt% (11 nm)/:4 wt% PO-01 (4 nm)/TAZ (40 nm)/LiF (0.5 nm)/Al (150 nm) [7] |
|---|---|
| Colour | White |
| Max. EQE | 38.4% |
| Max. Power Efficiency | 80.1 lm W−1 |
| Device Structure | Ag (100 nm)/ITO (10 nm)/DNTPD* (30 nm)/ (44 nm)/:3 wt% Ir(mphmq)2(acac) (20 nm)/ (31 nm)/Bphen: 5 wt% Li (10 nm)/HATCN (7 nm)/NPB (63 nm)/Bebq2: 3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (40 nm)/ (1 nm)/Mg:Ag (10:1; 18 nm)/NPB (60 nm) [8] |
|---|---|
| Colour | Red |
| Max. EQE | 26.5% |
| Max. Current Efficiency | 95.8 cd/A |
| Device Structure | ITO/HATCN (5 nm)/NPB (30 nm)/ (10 nm)/ (10 nm)/:PO-01* (0.8 wt% 30 nm)/ (10 nm)/ (30 nm)/LiF (0.5 nm)/Al(150 nm) [9] |
|---|---|
| Colour | White |
| Max. EQE | 20.8% |
| Max. Power Efficiency | 51.2 lm W−1 |
*For chemical structure information please refer to the cited references.
Pricing
| Grade | Order Code | Quantity | Price |
|---|---|---|---|
| Unsublimed (>99.0% purity) | M792 | 1 g | [[price gbp="115"]] |
| Sublimed (>99.0% purity) | M791 | 500 mg | [[price gbp="250"]] |
| Sublimed (>99.0% purity) | M791 | 1 g | [[price gbp="400"]] |
| Unsublimed (>99.0% purity) | M792 | 5 g | [[price gbp="420"]] |
| Sublimed (>99.0% purity) | M791 | 5 g | [[price gbp="1650"]] |
| Sublimed (>99.0% purity) | M791 | 10 g | [[price gbp="2900"]] |
MSDS Documentation
Literature and Reviews
- Highly efficient and stable tandem organic light-emitting devices based on HAT-CN/HAT-CN:TAPC/TAPC as a charge generation layer, Y. Dai et al., J. Mater. Chem. C, 3, 6809-6814 (2015);DOI: 10.1039/C4TC02875A.
- Solution-processed hexaazatriphenylene hexacarbonitrile as a universal hole-injection layer for organic light-emitting diodes, H. Lin et al., Org. Electronics 14, 1204–1210 (2013);
- Bipolar host materials for high efficiency phosphorescent organic light emitting diodes: tuning the HOMO/LUMO levels without reducing the triplet energy in a linear system, L. Cui et al., J. Mater. Chem. C, 1, 8177-8185 (2013); DOI: 10.1039/C3TC31675K.
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